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mrf8p9300hr6 MRF8P9300HSR6 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for cdma and multicarrier gsm base station applications with frequencies from 860 to 960 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single- carrier w - cdma performance: v dd = 28 volts, i dq = 2400 ma, p out = 100 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 920 mhz 19.6 35.4 6.0 - 37.3 940 mhz 19.6 35.6 6.0 - 37.1 960 mhz 19.4 35.8 5.9 - 36.7 ? capable of handling 10:1 vswr, @ 32 vdc, 940 mhz, 425 watts cw output power (3 db input overdrive from rated p out ), designed for enhanced ruggedness ? typical p out @ 1 db compression point 326 watts cw features ? 100% par tested for guaranteed output power capability ? characterized with series equivalent large - signal impedance parameters and common source s - parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate - source voltage r ange for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications ? rohs compliant ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +70 vdc gate - source voltage v gs - 6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 75 c, 100 w cw, 28 vdc, i dq = 2400 ma case temperature 80 c, 300 w cw, 28 vdc, i dq = 2400 ma r jc 0.22 0.20 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf8p9300h rev. 0, 11/2009 freescale semiconductor technical data 920 - 960 mhz, 100 w avg., 28 v single w - cdma lateral n - channel rf power mosfets mrf8p9300hr6 MRF8P9300HSR6 case 375d - 05, style 1 ni - 1230 mrf8p9300hr6 case 375e - 04, style 1 ni - 1230s MRF8P9300HSR6 (top view) rf outa /v dsa 31 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb figure 1. pin connections ? freescale semiconductor, inc., 2009. all rights reserved.
2 rf device data freescale semiconductor mrf8p9300hr6 MRF8P9300HSR6 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1c (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds = 70 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (1) (v ds = 10 vdc, i d = 400 adc) v gs(th) 1.5 2.3 3 vdc gate quiescent voltage (v dd = 28 vdc, i dq = 2400 ma, measured in functional test) v gs(q) 2.3 3.1 3.8 vdc drain- source on - voltage (1) (v gs = 10 vdc, i d = 3 adc) v ds(on) 0.1 0.2 0.3 vdc functional tests (2) (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 2400 ma, p out = 100 w avg., f = 960 mhz, single- carrier w - cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. power gain g ps 18.0 19.4 21.0 db drain efficiency d 32.0 35.8 ? % output peak - to - average ratio @ 0.01% probability on ccdf par 5.6 5.9 ? db adjacent channel power ratio acpr ? - 36.7 - 34.0 dbc input return loss irl ? -16 -10 db typical broadband performance (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 2400 ma, p out = 100 w avg., single- carrier w - cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. frequency g ps (db) d (%) output par (db) acpr (dbc) irl (db) 920 mhz 19.6 35.4 6.0 - 37.3 -9 940 mhz 19.6 35.6 6.0 - 37.1 -12 960 mhz 19.4 35.8 5.9 - 36.7 -16 1. each side of device measured separately. 2. part internally matched both on input and output. (continued)
mrf8p9300hr6 MRF8P9300HSR6 3 rf device data freescale semiconductor table 4. electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 2400 ma, 920 - 960 mhz bandwidth p out @ 1 db compression point, cw p1db ? 326 ? w imd symmetry @ 310 w pep, p out where imd third order intermodulation 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 17 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 30 ? mhz gain flatness in 40 mhz bandwidth @ p out = 100 w avg. g f ? 0.16 ? db gain variation over temperature (-30 c to +85 c) g ? 0.012 ? db/ c output power variation over temperature (-30 c to +85 c) p1db ? 0.008 ? dbm/ c
4 rf device data freescale semiconductor mrf8p9300hr6 MRF8P9300HSR6 figure 2. mrf8p9300hr6(hsr6) test circuit component layout cut out area mrf8p9300h rev. 2 c21 b2 c17 c15 c12* c13* c19 c7 c9 c8 c6 c5 c4 c3 c2 c1 c11* c10* c16 c14 c20 b1 c42 c44 c46 c48 c50 c52 c40 c36 c32 c43 c45 c47 c51 c49 c38 c39 c35 c34 c30 c31 c33 c23 c22 c25 c24 c26 c27 c29 c28 c37 c41 c53 *c10, c11, c12, and c13 are mounted vertically. c18 table 5. mrf8p9300hr6(hsr6) test circuit com ponent designations and values part description part number manufacturer b1, b2 short rf bead 2743019447 fair- rite c1 0.2 pf chip capacitor atc100b0r2bt500xt atc c2, c3, c16, c17, c26, c27 39 pf chip capacitors atc100b390jt500xt atc c4, c5, c28, c29, c32, c33, c34, c35 1.1 pf chip capacitors atc100b1r1bt500xt atc c6, c7 2.7 pf chip capacitors atc100b2r7bt500xt atc c8, c9 5.1 pf chip capacitors atc100b5r1ct500xt atc c10, c11, c12, c13 3.0 pf chip capacitors atc100b3r0ct500xt atc c14, c15, c42, c43 10 pf chip capacitors atc100b100jt500xt atc c18, c19 2.2 f, 50 v chip capacitors c1825c225j5rac- tu kemet c20, c21 47 f, 50 v electrolytic capacitors 476kxm050m illinois capacitor c22, c23 1.0 pf chip capacitors atc100b1r0bt500xt atc c24, c25 0.5 pf chip capacitors atc100b0r5bt500xt atc c30, c31 0.8 pf chip capacitors atc100b0r8bt500xt atc c36, c37 4.7 pf chip capacitors atc100b4r7ct500xt atc c38, c39 4.3 pf chip capacitors atc100b4r3ct500xt atc c40, c41 11 pf chip capacitors atc100b110jt500xt atc c44, c45 20 pf chip capacitors atc100b200jt500xt atc c46, c47 30 pf chip capacitors atc100b300jt500xt atc c48, c49, c50, c51 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c52, c53 470 f, 63 v electrolytic capacitors mcgpr63v477m13x26- rh multicomp pcb 0.030 , r = 3.50 rf - 35 taconic
mrf8p9300hr6 MRF8P9300HSR6 5 rf device data freescale semiconductor 4 2 2 4 2 2 single?ended quadrature combined doherty push?pull 4 4 4 4 figure 3. possible circuit topologies devices are tested in a parallel configuration
6 rf device data freescale semiconductor mrf8p9300hr6 MRF8P9300HSR6 typical characteristics irl, input return loss (db) 820 irl g ps acpr f, frequency (mhz) figure 4. output peak - to - average ratio compression (parc) broadband performance @ p out = 100 watts avg. ?10 ?20 14 20 ?40 50 40 30 ?30 ?35 d , drain efficiency (%) d g ps , power gain (db) 19 18 17 840 860 880 900 920 940 960 980 20 ?30 parc parc (db) ?2 0 ?1 ?3 acpr (dbc) figure 5. intermodulation distortion products versus two - tone spacing two?tone spacing (mhz) 10 ?60 ?10 ?20 ?30 ?50 1 100 imd, intermodulation distortion (dbc) ?40 im3?u im3?l im5?u im5?l im7?l im7?u v dd = 28 vdc, p out = 310 w (pep), i dq = 2400 ma two?tone measurements (f1 + f2)/2 = center frequency of 940 mhz figure 6. output peak - to - average ratio compression (parc) versus output power 1 p out , output power (watts) ?1 ?3 ?5 65 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 45 85 105 205 0 60 50 40 30 20 10 d , drain efficiency (%) ?1 db = 80.0 w 165 d parc acpr (dbc) ?50 ?20 ?25 ?30 ?40 ?35 ?45 21 g ps , power gain (db) 20 19 18 17 16 15 g ps v dd = 28 vdc, i dq = 2400 ma, f = 940 mhz single?carrier w?cdma, 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% probability on ccdf ?2 db = 110.0 w ?3 db = 155.2 w 16 15 0 v dd = 28 vdc, p out = 100 w (avg.), i dq = 2400 ma single?carrier w?cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probability on ccdf 125 145 185 acpr
mrf8p9300hr6 MRF8P9300HSR6 7 rf device data freescale semiconductor typical characteristics 1 acpr p out , output power (watts) avg. figure 7. single - carrier w - cdma power gain, drain efficiency and acpr versus output power ?10 15 21 0 60 50 40 30 20 d , drain efficiency (%) d g ps , power gain (db) 10 100 400 10 ?60 acpr (dbc) 20 19 0 ?20 figure 8. broadband frequency response ?15 25 600 f, frequency (mhz) v dd = 28 vdc p in = 0 dbm i dq = 2400 ma 10 5 ?5 700 gain (db) 20 gain 800 900 1000 1100 1200 irl ?25 15 0 ?5 ?10 ?15 irl (db) ?10 ?20 f = 920 mhz 18 17 16 ?50 ?40 ?30 940 mhz 960 mhz 920 mhz 0 15 5 10 g ps 940 mhz 960 mhz v dd = 28 vdc, i dq = 2400 ma single?carrier w?cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probability on ccdf w - cdma test signal 0.0001 100 0 peak?to?average (db) figure 9. ccdf w - cdma iq magnitude clipping, single - carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w?cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. input signal par = 7.5 db @ 0.01% probability on ccdf input signal 10 ?60 ?100 10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 ?1.8 ?3.6 ?5.4 ?9 9 f, frequency (mhz) figure 10. single - carrier w - cdma spectrum ?7.2 ?acpr in 3.84 mhz integrated bw +acpr in 3.84 mhz integrated bw ?10 0 13579
8 rf device data freescale semiconductor mrf8p9300hr6 MRF8P9300HSR6 v dd = 28 vdc, i dqa = i dqb = 1200 ma, p out = 100 w avg. f mhz z source z load 840 1.74 - j1.71 0.98 - j0.97 860 1.74 - j1.42 0.95 - j0.95 880 1.59 - j1.19 0.92 - j0.92 900 1.46 - j0.91 0.90 - j0.90 920 1.51 - j0.63 0.87 - j0.87 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 11. series equivalent source and load impedance z source z load input matching network device under test output matching network
mrf8p9300hr6 MRF8P9300HSR6 9 rf device data freescale semiconductor alternative peak tune load pull characteristics 36 p in , input power (dbm) v dd = 28 vdc, i dq = 1200 ma, pulsed cw, 10 sec(on), 10% duty cycle 54 52 50 37 55 53 47 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 51 56 58 35 34 33 27 38 32 31 57 49 48 30 f = 940 mhz f = 960 mhz f = 920 mhz ideal actual 29 28 f p1db f (mhz) watts dbm 920 229 53.6 940 214 53.3 960 219 53.4 test impedances per compression level f (mhz) z source z load 920 p1db 1.58 - j2.40 0.84 - j1.69 940 p1db 1.77 - j3.02 0.76 - j1.90 960 p1db 1.98 - j3.46 0.75 - j1.51 figure 12. pulsed cw output power versus input power @ 28 v note: measurement made on a per side basis.
10 rf device data freescale semiconductor mrf8p9300hr6 MRF8P9300HSR6 package dimensions
mrf8p9300hr6 MRF8P9300HSR6 11 rf device data freescale semiconductor
12 rf device data freescale semiconductor mrf8p9300hr6 MRF8P9300HSR6
mrf8p9300hr6 MRF8P9300HSR6 13 rf device data freescale semiconductor
14 rf device data freescale semiconductor mrf8p9300hr6 MRF8P9300HSR6 product documentation, tools and software refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software and tools, do a part number search at http://www.freescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 nov. 2009 ? initial release of data sheet
mrf8p9300hr6 MRF8P9300HSR6 15 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2009. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1 - 800- 441- 2447 or +1 - 303- 675- 2140 fax: +1 - 303- 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf8p9300h rev. 0, 11/2009

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